TK14E65W,S1XN-Channel 650 V 13.7A (Ta) 130W (Tc) Through Hole TO-220
1:$1.7520
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ABRmicro #.ABR2045-TK14E6-1029851
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK14E65W,S1X
Estimated Lead Time20 Weeks
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.7520
Ext. Price$ 1.7520
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.7520$1.7520
50$1.3860$69.2750
100$1.1870$118.6810
500$1.1610$580.6560
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDTMOSIV
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK14E65
Continuous Drain Current (ID) @ 25°C13.7A (Ta)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)35 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1300 pF @ 300 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation130W (Tc)
RDS(on) Drain-to-Source On Resistance250mOhm @ 6.9A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 690µA
Package / CaseTO-220-3
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info@Abrmicro.com Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK14E65W, S1X is a discrete semiconductor component manufactured by Toshiba Electronic Devices & Storage. It is an N-Channel MOSFET with a maximum voltage rating of 650V, a continuous drain current of 13.7A at ambient temperature, and a power dissipation of 130W when mounted on a suitable heat sink. The device is encased in a TO-220 package, making it suitable for through-hole mounting. It features a threshold voltage of 10V, operates with a gate-source voltage of 3.5V at a drain current of 690µA, and has an on-resistance of 250mOhm at a drain current of 6.9A with a 10V gate voltage.
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