TK11A45D(STA4,Q,M)N-Channel 450 V 11A (Ta) 40W (Tc) Through Hole TO-220SIS
1:$1.0680
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ABRmicro #.ABR2045-TK11A4-1030761
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK11A45D(STA4,Q,M)
Estimated Lead Time32 Weeks
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Datasheet
Mosfets Prod Guide(PDF)
Mosfets Prod Guide(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.0680
Ext. Price$ 1.0680
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.0680$1.0680
50$0.8620$43.0840
100$0.7100$70.9750
500$0.6400$319.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Seriesπ-MOSVII
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK11A45
Continuous Drain Current (ID) @ 25°C11A (Ta)
Drain-to-Source Voltage (VDS)450 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1050 pF @ 25 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance620mOhm @ 5.5A, 10V
Package Type (Mfr.)TO-220SIS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK11A45D(STA4,Q,M) is a discrete electronic component manufactured by Toshiba Electronic Devices & Storage, featuring an N-Channel configuration with a rated voltage of 450 V and a current capacity of 11 amperes (at Ta) or 40 watts (at Tc). It is housed in a TO-220SIS package designed for through-hole mounting. The MOSFET exhibits a drain-to-source on-resistance of 620 milliohms when operating at 5.5A and 10V, and it tolerates gate-source voltages up to ±30V. This component is typically utilized in circuits requiring efficient switching in high-voltage applications where low power loss is desired.
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