TK100E06N1,S1XN-Channel 60 V 100A (Ta) 255W (Tc) Through Hole TO-220
1:$2.1890
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ABRmicro #.ABR2045-TK100E-931293
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK100E06N1,S1X
Estimated Lead Time24 Weeks
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Datasheet
TK100E06N1(PDF)
TK100E06N1(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 2.1890
Ext. Price$ 2.1890
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.1890$2.1890
50$1.7610$88.0280
100$1.4490$144.9250
500$1.2260$613.0630
1000$1.0400$1040.1880
2000$0.9880$1976.2500
5000$0.9510$4754.6880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesU-MOSVIII-H
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK100E06
Continuous Drain Current (ID) @ 25°C100A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)140 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10500 pF @ 30 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation255W (Tc)
RDS(on) Drain-to-Source On Resistance2.3mOhm @ 50A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK100E06N1,S1X is a semiconductor component manufactured by Toshiba Electronic Devices & Storage, designed as an N-Channel MOSFET. It is constructed for through-hole mounting and is housed in a TO-220 package, providing a maximum drain-source voltage of 60 V and supporting up to 100 A of continuous current when appropriately heatsinked. The component is capable of dissipating power up to 255W, making it suitable for high-power applications. Additionally, it features a gate-source voltage of 10V and a gate charge characterized by a capacitance of 10500 pF at 30 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.