SSM6K407TU,LFN-Channel 60 V 2A (Ta) 500mW (Ta) Surface Mount UF6
1:$0.3840
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ABRmicro #.ABR2045-SSM6K4-973005
ManufacturerToshiba Electronic Devices & Storage
MPN #.SSM6K407TU,LF
Estimated Lead Time26 Weeks
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3840
Ext. Price$ 0.3840
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3840$0.3840
10$0.3020$3.0180
100$0.1820$18.1690
500$0.1670$83.4060
1000$0.1150$114.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSSM6K407
Continuous Drain Current (ID) @ 25°C2A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)150 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C
Maximum Power Dissipation500mW (Ta)
RDS(on) Drain-to-Source On Resistance300mOhm @ 1A, 10V
Package Type (Mfr.)UF6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / Case6-SMD, Flat Leads
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info@Abrmicro.com Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The Toshiba SSM6K407TU,LF is a compact N-Channel MOSFET designed for efficient power management in a variety of electronic devices. It operates with a voltage of up to 60V and can handle a continuous current of 2A, with a power dissipation capacity of 500mW when mounted on a surface. The device features a low on-resistance of 300 milliohms at 1A with a gate-source voltage of 10V, ensuring minimal power loss during operation. Additionally, it has a gate charge capacitance of 150 pF at 10V and can withstand gate-source voltages up to ±20V. Packaged in a space-saving UF6 form factor, it is suitable for high-density applications that require reliable performance.
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