SSM6K406TU,LFN-Channel 30 V 4.4A (Ta) 500mW (Ta) Surface Mount UF6
1:$0.4100
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ABRmicro #.ABR2045-SSM6K4-1000318
ManufacturerToshiba Electronic Devices & Storage
MPN #.SSM6K406TU,LF
Estimated Lead Time26 Weeks
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Datasheet
SSM6K406TU(PDF)
SSM6K406TU(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.4100
Ext. Price$ 0.4100
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4100$0.4100
10$0.3520$3.5170
100$0.2430$24.3310
500$0.1900$95.0940
1000$0.1550$155.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSSM6K406
Continuous Drain Current (ID) @ 25°C4.4A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12.4 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)490 pF @ 15 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C
Maximum Power Dissipation500mW (Ta)
RDS(on) Drain-to-Source On Resistance25mOhm @ 2A, 10V
Package Type (Mfr.)UF6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 1mA
Package / Case6-SMD, Flat Leads
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The SSM6K406TU,LF is a surface mount N-Channel MOSFET manufactured by Toshiba Electronic Devices & Storage. It is designed to handle a maximum voltage of 30 V and a continuous current of 4.4A, with a power dissipation capacity of 500mW in a Ta environment. The device exhibits a threshold voltage of ±20V and requires 2.5V to conduct 1mA of current. Encased in a UF6 package, this MOSFET offers reliable performance in various electronic circuits where efficient switching is required.
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