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SSM6J53FE(TE85L,F)P-Channel 20 V 1.8A (Ta) 500mW (Ta) Surface Mount ES6
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ABRmicro #.ABR2045-SSM6J5-944316
ManufacturerToshiba Electronic Devices & Storage
MPN #.SSM6J53FE(TE85L,F)
Estimated Lead Time-
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DatasheetMosfets Prod Guide(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Mosfet Array 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6 Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSSM6J53
Continuous Drain Current (ID) @ 25°C1.8A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 2.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)10.6 nC @ 4 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)568 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation500mW (Ta)
RDS(on) Drain-to-Source On Resistance136mOhm @ 1A, 2.5V
Package Type (Mfr.)ES6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 1mA
Package / CaseSOT-563, SOT-666
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The SSM6J53FE(TE85L,F) is a P-Channel MOSFET manufactured by Toshiba Electronic Devices & Storage. It features a voltage rating of 20V and can handle a current up to 1.8A with a power dissipation of 500mW when mounted on a surface. The device is designed in a compact ES6 package. It exhibits an on-resistance of 136 milliohms at a current of 1A and a gate-source voltage of 2.5V, while its gate threshold voltage is 1V at 1mA. The MOSFET also provides a gate-source voltage range of ±8V, making it suitable for applications requiring efficient switching in a compact form factor.
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