SSM6J502NU,LFP-Channel 20 V 6A (Ta) 1W (Ta) Surface Mount 6-UDFNB (2x2)
1:$0.3840
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ABRmicro #.ABR2045-SSM6J5-981242
ManufacturerToshiba Electronic Devices & Storage
MPN #.SSM6J502NU,LF
Estimated Lead Time16 Weeks
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3840
Ext. Price$ 0.3840
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3840$0.3840
10$0.2980$2.9750
100$0.1790$17.8500
500$0.1660$82.8750
1000$0.1130$112.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesU-MOSVI
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSSM6J502
Continuous Drain Current (ID) @ 25°C6A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)24.8 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1800 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1W (Ta)
RDS(on) Drain-to-Source On Resistance23.1mOhm @ 4A, 4.5V
Package Type (Mfr.)6-UDFNB (2x2)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 1mA
Package / Case6-WDFN Exposed Pad
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info@Abrmicro.com Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SSM6J502NU,LF from Toshiba Electronic Devices & Storage is a P-channel MOSFET designed for efficient power management in electronic applications. It features a compact surface-mount 6-UDFNB package (2x2 mm), making it suitable for space-constrained designs. The MOSFET supports up to 20 V and 6 A, with a power dissipation capacity of 1W under normal conditions. It exhibits a low on-resistance of 23.1 mOhm at 4 A with a gate voltage of 4.5 V, which promotes minimized energy loss and enhanced thermal performance. Additionally, it operates within a gate-source voltage range of ±8V and offers threshold voltages of 1.5V and 4.5V, contributing to its versatility in various circuit requirements.
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