SSM6J215FE(TE85L,FP-Channel 20 V 3.4A (Ta) 500mW (Ta) Surface Mount ES6
1:$0.3240
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ABRmicro #.ABR2045-SSM6J2-979238
ManufacturerToshiba Electronic Devices & Storage
MPN #.SSM6J215FE(TE85L,F
Estimated Lead Time12 Weeks
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Datasheet
SSM6J215FE(PDF)
SSM6J215FE(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3240
Ext. Price$ 0.3240
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3240$0.3240
10$0.2520$2.5180
100$0.1520$15.1940
500$0.1400$70.1250
1000$0.0960$95.6250
2000$0.0870$174.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesU-MOSVI
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSSM6J215
Continuous Drain Current (ID) @ 25°C3.4A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)10.4 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)630 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation500mW (Ta)
RDS(on) Drain-to-Source On Resistance59mOhm @ 3A, 4.5V
Package Type (Mfr.)ES6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 1mA
Package / CaseSOT-563, SOT-666
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The SSM6J215FE(TE85L,F from Toshiba Electronic Devices & Storage is a P-channel MOSFET that operates at a voltage of 20 V and a current rating of 3.4 A at 500 mW. It is designed for surface mount applications in an ES6 package. This component features a low on-resistance of 59 mOhms at a drive current of 3 A with a gate-source voltage of 4.5 V. Additionally, it has a total gate charge of 10.4 nC at 4.5 V and an input capacitance of 630 pF at 10 V, making it suitable for use in switching and amplification tasks that benefit from these specifications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.