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SSM4K27CTTPL3N-Channel 20 V 500mA (Ta) 400mW (Ta) Surface Mount CST4 (1.2x0.8)

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ABRmicro #.ABR278-SSM4K2-917508
MPN #.SSM4K27CTTPL3
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 24, 2024
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Technical Specifications
SeriesU-MOSIII
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSSM4K27
Continuous Drain Current (ID) @ 25°C500mA (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)174 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation400mW (Ta)
RDS(on) Drain-to-Source On Resistance205mOhm @ 250mA, 4V
Package Type (Mfr.)CST4 (1.2x0.8)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.1V @ 1mA
Package / Case4-SMD, No Lead
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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Additional Details
The Toshiba SSM4K27CTTPL3 is a surface-mount N-Channel MOSFET designed for efficient miniature power switching applications. It operates with a maximum voltage of 20 V and can handle a continuous current of 500 mA while dissipating up to 400 mW of power in appropriate thermal conditions. This device features a low on-resistance of 205 milliohms when conducting a 250 mA current at 4V, allowing for efficient energy transfer with minimal losses. The MOSFET also has an input capacitance of 174 pF when measured at 10 V, which affects its switching speed and performance. Housed in a compact CST4 package with dimensions of 1.2 mm by 0.8 mm, it is suitable for densely populated circuit boards.
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