SSM4K27CTTPL3N-Channel 20 V 500mA (Ta) 400mW (Ta) Surface Mount CST4 (1.2x0.8)
N/A
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ABRmicro #.ABR2045-SSM4K2-917508
ManufacturerToshiba Electronic Devices & Storage
MPN #.SSM4K27CTTPL3
Estimated Lead Time-
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Datasheet
Mosfets Prod Guide(PDF)
Mosfets Prod Guide(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 13, 2024
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Technical Specifications
SeriesU-MOSIII
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSSM4K27
Continuous Drain Current (ID) @ 25°C500mA (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)174 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation400mW (Ta)
RDS(on) Drain-to-Source On Resistance205mOhm @ 250mA, 4V
Package Type (Mfr.)CST4 (1.2x0.8)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.1V @ 1mA
Package / Case4-SMD, No Lead
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Datasheets
Product Drawings
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)