SSM3K56FS,LFN-Channel 20 V 800mA (Ta) 150mW (Ta) Surface Mount SSM
1:$0.2140
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SSM3K5-1035027
ManufacturerToshiba Electronic Devices & Storage
MPN #.SSM3K56FS,LF
Estimated Lead Time24 Weeks
SampleGet Free Sample
Datasheet
SSM3K56FS(PDF)
SSM3K56FS(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 3241282
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.2140
Ext. Price$ 0.2140
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.2140$0.2140
10$0.1510$1.5090
100$0.0770$7.6500
500$0.0630$31.3440
1000$0.0470$46.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
2SC3325-Y,LF$0.2660
Bipolar (BJT) Transistor NPN 50 V 500 mA 300MHz 200 mW Surface Mount S-MiniPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM
RN2310,LF$0.1460
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
SSM3J35CT,L3F$0.2740
P-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount CST3SSM3K35CT,L3F$0.2560
N-Channel 20 V 180mA (Ta) 100mW (Ta) Surface Mount CST3
SSM6N62TU,LF$0.3330
Mosfet Array 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6
N-Channel 30 V 24A (Ta) Surface Mount 8-TSON Advance (3.1x3.1)
Technical Specifications
SeriesU-MOSVII-H
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSSM3K56
Continuous Drain Current (ID) @ 25°C800mA (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)1 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)55 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation150mW (Ta)
RDS(on) Drain-to-Source On Resistance235mOhm @ 800mA, 4.5V
Package Type (Mfr.)SSM
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 1mA
Package / CaseSC-75, SOT-416
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The Toshiba SSM3K56FS,LF is a surface mount N-Channel MOSFET designed to handle a maximum voltage of 20 volts and a current of up to 800 milliamperes with a power dissipation of 150 milliwatts at ambient temperature (Ta). It operates efficiently with gate-source voltages as low as 1.5 volts or as high as 4.5 volts, and has an input capacitance of 55 picofarads at 10 volts. Additionally, it supports an electrostatic discharge (ESD) performance of up to ±8 volts. This component is suitable for compact electronic designs where space and power efficiency are crucial.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.