SSM3K344R,LFN-Channel 20 V 3A (Ta) 1W (Ta) Surface Mount SOT-23F
1:$0.3510
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ABRmicro #.ABR2045-SSM3K3-983166
ManufacturerToshiba Electronic Devices & Storage
MPN #.SSM3K344R,LF
Estimated Lead Time12 Weeks
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Datasheet
SSM3K344R(PDF)
SSM3K344R(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3510
Ext. Price$ 0.3510
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3510$0.3510
10$0.2500$2.4970
100$0.1260$12.6440
500$0.1120$55.7810
1000$0.0870$87.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesU-MOSVII-H
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSSM3K344
Continuous Drain Current (ID) @ 25°C3A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)2 nC @ 4 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)153 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1W (Ta)
RDS(on) Drain-to-Source On Resistance71mOhm @ 3A, 4.5V
Package Type (Mfr.)SOT-23F
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 1mA
Package / CaseSOT-23-3 Flat Leads
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SSM3K344R,LF is an N-Channel MOSFET manufactured by Toshiba Electronic Devices & Storage. Designed for surface mount applications, it is housed in a compact SOT-23F package. This MOSFET operates with a drain-source voltage of 20 V and can handle a continuous drain current of up to 3A, with a power dissipation capacity of 1W. It features a gate threshold voltage of 1V at 1mA and is designed to withstand gate-source voltages of ±8V. Additionally, it has a gate charge of 2 nC when driven at 4 V, making it a suitable choice for efficient and compact electronic circuit designs.
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