SSM3K310T(TE85L,F)N-Channel 20 V 5A (Ta) 700mW (Ta) Surface Mount TSM
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ABRmicro #.ABR2045-SSM3K3-948120
ManufacturerToshiba Electronic Devices & Storage
MPN #.SSM3K310T(TE85L,F)
Estimated Lead Time-
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Datasheet
SSM3K310T(PDF)
SSM3K310T(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSSM3K310
Continuous Drain Current (ID) @ 25°C5A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14.8 nC @ 4 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1120 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation700mW (Ta)
RDS(on) Drain-to-Source On Resistance28mOhm @ 4A, 4V
Package Type (Mfr.)TSM
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The SSM3K310T(TE85L,F) is a surface mount N-channel MOSFET manufactured by Toshiba Electronic Devices & Storage. It is designed to handle a drain-source voltage of up to 20 volts and a continuous drain current of 5 amperes at a power dissipation of 700 milliwatts. The device features a gate-source voltage rating of ±10 volts and operates effectively with gate threshold voltages of 1.5 volts and 4 volts. Additionally, it has an input capacitance of 1120 pF measured at a drain-source voltage of 10 volts, making it suitable for efficient power switching in compact electronic designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.