SSM3K16CT,L3FN-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount CST3
1:$0.2560
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SSM3K1-991818
ManufacturerToshiba Electronic Devices & Storage
MPN #.SSM3K16CT,L3F
Estimated Lead Time16 Weeks
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Datasheet
SSM3K16CT(PDF)
SSM3K16CT(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.2560
Ext. Price$ 0.2560
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.2560$0.2560
10$0.1740$1.7430
100$0.0850$8.5000
500$0.0700$35.0630
1000$0.0490$48.8750
2000$0.0430$85.0000
5000$0.0390$196.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Seriesπ-MOSIV
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSSM3K16
Continuous Drain Current (ID) @ 25°C100mA (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9.3 pF @ 3 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C
Maximum Power Dissipation100mW (Ta)
RDS(on) Drain-to-Source On Resistance3Ohm @ 10mA, 4V
Package Type (Mfr.)CST3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.1V @ 100µA
Package / CaseSC-101, SOT-883
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The Toshiba SSM3K16CT,L3F is a compact N-Channel MOSFET designed for surface mount applications, featuring a maximum voltage rating of 20 V and a current rating of 100mA (Ta). It is capable of dissipating up to 100mW (Ta), making it suitable for efficient power management in small electronic devices. This component has a low on-resistance of 3 Ohm at a gate-source voltage of 4V and 10mA current, ensuring minimal power loss during operation. With an input capacitance of 9.3 pF at 3 V, it offers fast switching capabilities. The device is housed in a CST3 package, which supports its use in compact circuit designs.
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