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2SK2917(F)N-Channel 500 V 18A (Ta) 90W (Tc) Through Hole TO-3P(N)IS
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ABRmicro #.ABR2045-2SK291-1004907
ManufacturerToshiba Electronic Devices & Storage
MPN #.2SK2917(F)
Estimated Lead Time-
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Datasheet2SK2917(PDF)
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
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Tube
Shipping DateNovember 16, 2024
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Mosfet Array 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6 Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product Number2SK2917
Continuous Drain Current (ID) @ 25°C18A (Ta)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)80 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3720 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation90W (Tc)
RDS(on) Drain-to-Source On Resistance270mOhm @ 10A, 10V
Package Type (Mfr.)TO-3P(N)IS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Toshiba 2SK2917(F) is a high-power N-channel MOSFET transistor designed for efficient electrical performance, featuring a maximum voltage rating of 500V and a current capacity of 18A. Encased in a TO-3P(N)IS through-hole package, this component offers a power dissipation capability of up to 90W under specified temperature conditions. Its characteristics include a capacitance of 3720 pF at 10 V and a total gate charge of 80 nC at the same voltage level, with a threshold voltage of 4V at a current level of 1mA.
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