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2SJ610(TE16L1,NQ)P-Channel 250 V 2A (Ta) 20W (Ta) Surface Mount PW-MOLD

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ABRmicro #.ABR2045-2SJ610-995192
ManufacturerToshiba Electronic Devices & Storage
MPN #.2SJ610(TE16L1,NQ)
Estimated Lead Time-
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DatasheetDatasheet2SJ610(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product Number2SJ610
Continuous Drain Current (ID) @ 25°C2A (Ta)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)381 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation20W (Ta)
RDS(on) Drain-to-Source On Resistance2.55Ohm @ 1A, 10V
Package Type (Mfr.)PW-MOLD
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
2SJ610Mosfets Prod Guide
PCN Obsolescence/ EOL
EOL 08/Nov/2013
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Toshiba 2SJ610(TE16L1,NQ) is a P-Channel MOSFET designed for efficient surface mounting, encapsulated in a PW-MOLD package. It can handle a maximum drain-source voltage of 250 volts and a continuous drain current of up to 2 amperes at the ambient temperature (Ta), with a power dissipation capacity of 20 watts (Ta). The MOSFET exhibits an on-resistance of 2.55 ohms when a drain current of 1 ampere flows with a gate-source voltage of 10 volts. It operates effectively with a gate threshold voltage starting at 3.5 volts with a gate current of 1 mA and can withstand gate-source voltages up to ±20 volts. This component is suitable for various applications requiring reliable switching and low on-resistance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.