ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
RGS60TS65HRC11IGBT Trench Field Stop 650 V 56 A 223 W Through Hole TO-247N

1:$4.2700

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR279-RGS60T-106119
ManufacturerRohm Semiconductor
MPN #.RGS60TS65HRC11
Estimated Lead Time22 Weeks
SampleGet Free Sample
DatasheetDatasheetRGS60TS65HRC11 (PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 23, 2024
* Quantity
Unit Price$4.2700
Ext. Price$4.2700
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
30$4.2700$128.1060
90$3.6600$329.4280
300$3.4560$1036.8940
750$3.2530$2440.0310
1500$2.7850$4177.2190
3000$2.6220$7866.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberRGS60
Collector Current (Iᴄ)@25°C56 A
Pulsed Collector Current (Iᴄᴘ)90 A
Gate Charge36 nC
IGBT TypeTrench Field Stop
Input TypeStandard
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Power - Max223 W
Package Type (Mfr.)TO-247N
Switching Energy660µJ (on), 810µJ (off)
Turn-Off Delay Time td(off) @25°C(Typ.)28ns/104ns
Test Condition400V, 30A, 10Ohm, 15V
Collector-to-Emitter On Voltage (Vᴄᴇ(on))@(Vɢᴇ)(Iᴄ)2.1V @ 15V, 30A
Collector-Emitter Breakdown Voltage (Max.)650 V
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
RGS60TS65HRC11
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Related Parts
DTA013ZMT2L$0.2320
Rohm Semiconductor
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3
DTA114EMFHAT2L$0.2320
Rohm Semiconductor
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3
R6009END3TL1$2.0600
Rohm Semiconductor
N-Channel 600 V 9A (Tc) 94W (Tc) Surface Mount TO-252
R6011KND3TL1$2.5040
Rohm Semiconductor
N-Channel 600 V 11A (Tc) 124W (Tc) Surface Mount TO-252
R6020KNZ4C13$4.5730
Rohm Semiconductor
N-Channel 600 V 20A (Tc) 231W (Tc) Through Hole TO-247
R6030ENZ4C13$5.5560
Rohm Semiconductor
N-Channel 600 V 30A (Tc) 305W (Tc) Through Hole TO-247
R6509ENJTL$2.8040
Rohm Semiconductor
N-Channel 650 V 9A (Tc) 94W (Tc) Surface Mount LPTS
Additional Details
The RGS60TS65HRC11 is an insulated-gate bipolar transistor (IGBT) produced by Rohm Semiconductor, designed with trench field stop technology. It operates with a collector-emitter voltage of 650 volts and can handle a continuous current of 56 amps, making it suitable for high-power operations. The device has a power dissipation capacity of 223 watts and is packaged in a TO-247N through-hole casing for robust mounting and reliable performance. Its specifications include a 400V, 30A standard rating, with an on-state resistance of 10 ohms at 15V, and energy dissipation values of 660µJ during turn-on and 810µJ during turn-off events.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.