R6509ENJTLN-Channel 650 V 9A (Tc) 94W (Tc) Surface Mount LPTS
1:$2.8040
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ABRmicro #.ABR278-R6509E-48122
ManufacturerRohm Semiconductor
MPN #.R6509ENJTL
Estimated Lead Time23 Weeks
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Datasheet
R6509ENJTL (PDF)
R6509ENJTL (PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$2.8040
Ext. Price$2.8040
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.8040$2.8040
10$2.3530$23.5340
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberR6509
Continuous Drain Current (ID) @ 25°C9A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)430 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation94W (Tc)
RDS(on) Drain-to-Source On Resistance585mOhm @ 2.8A, 10V
Package Type (Mfr.)LPTS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 230µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The R6509ENJTL from Rohm Semiconductor is an N-channel MOSFET designed for efficient performance in switching applications. It operates with a maximum drain-source voltage of 650 V and supports a continuous drain current of up to 9A at specified conditions, with a power dissipation capacity of 94W. The component is housed in a surface mount LPTS package, providing a compact form factor for circuit design. With a gate threshold voltage of 10V and a total gate charge of 24 nC at 10 V, it allows for efficient switching characteristics. The MOSFET also features a gate-source voltage rating of ±20V, accommodating adequate control voltage margins.
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