R6024ENZC17N-Channel 600 V 24A (Tc) 120W (Tc) Through Hole TO-3PF
1:$5.2400
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ABRmicro #.ABR278-R6024E-60289
ManufacturerRohm Semiconductor
MPN #.R6024ENZC17
Estimated Lead Time23 Weeks
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Datasheet
R6024ENZC17 (PDF)
R6024ENZC17 (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 23, 2024
* Quantity
Unit Price$5.2400
Ext. Price$5.2400
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.2400$5.2400
30$4.1520$124.5680
120$3.5580$426.9980
510$3.1640$1613.7040
1020$2.7090$2763.5630
2010$2.5500$5125.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberR6024
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)70 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1650 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation120W (Tc)
RDS(on) Drain-to-Source On Resistance165mOhm @ 11.3A, 10V
Package Type (Mfr.)TO-3PF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-3P-3 Full Pack
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The R6024ENZC17 is an N-channel MOSFET manufactured by Rohm Semiconductor. It is designed to handle a high voltage of 600V and a continuous current of 24A, making it suitable for robust power management in electronic systems. The part is housed in a TO-3PF package, which is a through-hole configuration, ensuring effective heat dissipation and mechanical stability. It features a low on-resistance of 165mOhm at 11.3A with a 10V gate drive, improving efficiency by minimizing power loss. The MOSFET has a threshold voltage of 4V at a gate current of 1mA and can tolerate gate-source voltages of up to ±20V, indicating good control and protection against voltage spikes.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.