R6009END3TL1N-Channel 600 V 9A (Tc) 94W (Tc) Surface Mount TO-252
1:$2.0600
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ABRmicro #.ABR278-R6009E-47765
ManufacturerRohm Semiconductor
MPN #.R6009END3TL1
Estimated Lead Time23 Weeks
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Datasheet
R6009END3TL1 (PDF)
R6009END3TL1 (PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$2.0600
Ext. Price$2.0600
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.0600$2.0600
10$1.7120$17.1170
100$1.3620$136.2130
500$1.1530$576.4060
1000$0.9780$977.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberR6009
Continuous Drain Current (ID) @ 25°C9A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)23 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)430 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation94W (Tc)
RDS(on) Drain-to-Source On Resistance535mOhm @ 2.8A, 10V
Package Type (Mfr.)TO-252
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The R6009END3TL1, manufactured by Rohm Semiconductor, is an N-Channel MOSFET designed for surface mount applications, encapsulated in a TO-252 package. It operates with a maximum drain-source voltage of 600V and can conduct a continuous drain current of 9A under specified conditions (Tc). The device exhibits a maximum power dissipation of 94 watts (Tc). It offers a drain-source on-state resistance of 535 milliohms at a drain current of 2.8A with a gate-source voltage of 10V, and features an input capacitance of 430 pF measured at 25 V. It can handle gate-source voltages of up to ±20V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.