R6030ENZ4C13N-Channel 600 V 30A (Tc) 305W (Tc) Through Hole TO-247
1:$5.5560
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ABRmicro #.ABR278-R6030E-12501
ManufacturerRohm Semiconductor
MPN #.R6030ENZ4C13
Estimated Lead Time18 Weeks
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Datasheet
R6030ENZ4C13 (PDF)
R6030ENZ4C13 (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 23, 2024
* Quantity
Unit Price$5.5560
Ext. Price$5.5560
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.5560$5.5560
30$4.4360$133.0780
120$4.1100$493.1700
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberR6030
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)85 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2100 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation305W (Tc)
RDS(on) Drain-to-Source On Resistance130mOhm @ 14.5A, 10V
Package Type (Mfr.)TO-247
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-247-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The R6030ENZ4C13 is a robust N-channel MOSFET manufactured by Rohm Semiconductor, designed for efficient power management. This component supports a substantial maximum voltage of 600 V and can handle a continuous current of 30A when measured at the case temperature (Tc). With a power dissipation of 305W at Tc, it effectively manages thermal loads. The MOSFET features an on-resistance of 130 milliohms at a test condition of 14.5A and 10V, making it suitable for high-power and high-efficiency applications. Packaged in a TO-247 through-hole design, this part is engineered for integration into various electronic circuits requiring high voltage and current handling capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.