The DTA013ZMT2L is a surface-mount pre-biased PNP bipolar junction transistor (BJT) manufactured by Rohm Semiconductor. It is designed to handle a collector-emitter voltage of up to 50 volts and a continuous collector current of 100 milliamps. The transistor can dissipate a maximum power of 150 milliwatts. It features a transition frequency of 250 MHz, making it suitable for high-speed applications. The built-in resistor configuration allows for easier biasing with a base current of 500 nanoamps and a base-emitter resistor of 1 kOhm. Additionally, it provides a current gain (hFE) of 30 at a test condition of 5 milliamps, 10 volts. The transistor comes in a compact VMT3 package, optimizing it for space-constrained designs.