ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
R6011KND3TL1N-Channel 600 V 11A (Tc) 124W (Tc) Surface Mount TO-252

1:$2.3570

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-R6011K-25251
ManufacturerRohm Semiconductor
MPN #.R6011KND3TL1
Estimated Lead Time23 Weeks
SampleGet Free Sample
DatasheetDatasheetR6011KND3TL1(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 1729
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 2.3570
Ext. Price$ 2.3570
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.3570$2.3570
10$1.9560$19.5600
100$1.5570$155.7000
500$1.3180$659.0000
1000$1.1180$1118.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
DTA013ZMT2L$0.2180
Rohm Semiconductor
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3
DTA114EMFHAT2L$0.2180
Rohm Semiconductor
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3
R6009END3TL1$1.9390
Rohm Semiconductor
N-Channel 600 V 9A (Tc) 94W (Tc) Surface Mount TO-252
R6020KNZ4C13$4.3040
Rohm Semiconductor
N-Channel 600 V 20A (Tc) 231W (Tc) Through Hole TO-247
R6024ENZC17$4.9320
Rohm Semiconductor
N-Channel 600 V 24A (Tc) 120W (Tc) Through Hole TO-3PF
R6030ENZ4C13$5.2290
Rohm Semiconductor
N-Channel 600 V 30A (Tc) 305W (Tc) Through Hole TO-247
R6509ENJTL$2.6390
Rohm Semiconductor
N-Channel 650 V 9A (Tc) 94W (Tc) Surface Mount LPTS
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberR6011
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)740 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation124W (Tc)
RDS(on) Drain-to-Source On Resistance390mOhm @ 3.8A, 10V
Package Type (Mfr.)TO-252
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
R6011KND3TL1
Video File
4th Gen Super Junction MOSFETs R60xxYNxPresto MOS R600xVNx Series
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)