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R6020KNZ4C13N-Channel 600 V 20A (Tc) 231W (Tc) Through Hole TO-247

1:$4.5730

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ABRmicro #.ABR278-R6020K-4317
ManufacturerRohm Semiconductor
MPN #.R6020KNZ4C13
Estimated Lead Time18 Weeks
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DatasheetDatasheetR6020KNZ4C13 (PDF)
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In Stock: 292
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 23, 2024
* Quantity
Unit Price$4.5730
Ext. Price$4.5730
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.5730$4.5730
30$3.6550$109.6500
120$3.3860$406.3430
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberR6020
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1550 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation231W (Tc)
RDS(on) Drain-to-Source On Resistance196mOhm @ 9.5A, 10V
Package Type (Mfr.)TO-247
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 1mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
R6020KNZ4C13
Video File
4th Gen Super Junction MOSFETs R60xxYNxPresto MOS R600xVNx Series
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The R6020KNZ4C13 is a high-performance N-channel MOSFET manufactured by Rohm Semiconductor. It is designed for use in demanding electrical environments, offering a 600 V drain-source voltage and a continuous current capacity of 20A at case temperature (Tc). This component can efficiently dissipate up to 231 watts of power in a through-hole TO-247 package, making it suitable for robust thermal and electrical performance. Featuring a gate threshold voltage of 5V at 1mA and a total gate charge of 40 nC at 10V, this MOSFET provides efficient switching capability due to its metal oxide construction.
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