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DTA114EMFHAT2LPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3

1:$0.2320

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ABRmicro #.ABR292-DTA114-9497
ManufacturerRohm Semiconductor
MPN #.DTA114EMFHAT2L
Estimated Lead Time18 Weeks
SampleGet Free Sample
DatasheetDatasheetDTA114EMFHAT2L (PDF)
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In Stock: 4536
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$0.2320
Ext. Price$0.2320
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.2320$0.2320
10$0.1590$1.5940
100$0.0810$8.0750
500$0.0660$32.9380
1000$0.0490$48.8750
2000$0.0400$80.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberDTA114
Collector Current (Iᴄ)@25°C100 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Frequency - Transition250 MHz
GradeAutomotive
Mounting StyleSurface Mount
Power - Max150 mW
QualificationAEC-Q101
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
Package Type (Mfr.)VMT3
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseSOT-723
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
DTA114EMFHAT2L
Other Related Documents
Part No. Explanation, Transistors
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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Additional Details
The DTA114EMFHAT2L is a surface-mounted, pre-biased PNP bipolar junction transistor (BJT) manufactured by Rohm Semiconductor. It is designed with a voltage tolerance of up to 50 V and can handle a continuous current of 100 mA. The transistor operates efficiently at frequencies up to 250 MHz and has a power dissipation capacity of 150 mW. It features a pre-bias resistor of 10 kOhms, a DC current gain of 30 at a collector current of 5 mA and a collector-emitter voltage of 5 V, and a collector cutoff current of 500 nA. The compact VMT3 package makes it suitable for space-constrained applications.
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