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RGS60TS65DHRC11IGBT Trench Field Stop 650 V 56 A 223 W Through Hole TO-247N

1:$4.1630

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ABRmicro #.ABR279-RGS60T-102596
ManufacturerRohm Semiconductor
MPN #.RGS60TS65DHRC11
Estimated Lead Time22 Weeks
SampleGet Free Sample
DatasheetDatasheetRGS60TS65DHRC11 (PDF)
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In Stock: 315
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 23, 2024
* Quantity
Unit Price$4.1630
Ext. Price$4.1630
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.1630$4.1630
30$3.3200$99.6090
120$3.0770$369.2400
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberRGS60
Collector Current (Iᴄ)@25°C56 A
Pulsed Collector Current (Iᴄᴘ)90 A
Gate Charge36 nC
IGBT TypeTrench Field Stop
Input TypeStandard
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Power - Max223 W
Reverse Recovery Time (trr)103 ns
Package Type (Mfr.)TO-247N
Switching Energy660µJ (on), 810µJ (off)
Turn-Off Delay Time td(off) @25°C(Typ.)28ns/104ns
Test Condition400V, 30A, 10Ohm, 15V
Collector-to-Emitter On Voltage (Vᴄᴇ(on))@(Vɢᴇ)(Iᴄ)2.1V @ 15V, 30A
Collector-Emitter Breakdown Voltage (Max.)650 V
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
RGS60TS65DHRC11
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The RGS60TS65DHRC11 from Rohm Semiconductor is an advanced Insulated Gate Bipolar Transistor (IGBT) designed for efficient power management. It features a trench field stop construction, which allows it to handle a voltage of 650 V and a current of 56 A, with a power dissipation capacity of 223 W. The IGBT provides reliable performance in a compact TO-247N through-hole package. Switching characteristics include a turn-on time of 28 ns and a turn-off time of 104 ns. It can handle current pulses up to 90 A and operates with a gate-emitter voltage drop of 2.1V at 15V and 30A.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.