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RGS00TS65HRC11IGBT Trench Field Stop 650 V 88 A 326 W Through Hole TO-247N

1:$4.8890

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR279-RGS00T-77578
ManufacturerRohm Semiconductor
MPN #.RGS00TS65HRC11
Estimated Lead Time22 Weeks
SampleGet Free Sample
DatasheetDatasheetRGS00TS65HRC11 (PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 23, 2024
* Quantity
Unit Price$4.8890
Ext. Price$4.8890
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
30$4.8890$146.6570
90$4.3740$393.6880
300$4.1160$1234.8380
750$3.8590$2894.2500
1500$3.4730$5209.9690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberRGS00
Collector Current (Iᴄ)@25°C88 A
Pulsed Collector Current (Iᴄᴘ)150 A
Gate Charge58 nC
IGBT TypeTrench Field Stop
Input TypeStandard
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Power - Max326 W
Package Type (Mfr.)TO-247N
Switching Energy1.46mJ (on), 1.29mJ (off)
Turn-Off Delay Time td(off) @25°C(Typ.)36ns/115ns
Test Condition400V, 50A, 10Ohm, 15V
Collector-to-Emitter On Voltage (Vᴄᴇ(on))@(Vɢᴇ)(Iᴄ)2.1V @ 15V, 50A
Collector-Emitter Breakdown Voltage (Max.)650 V
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
RGS00TS65HRC11
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The RGS00TS65HRC11 by Rohm Semiconductor is an insulated-gate bipolar transistor (IGBT) featuring trench field stop technology. It is designed to handle a collector-emitter voltage of 650 volts and a continuous collector current of 88 amperes, with a maximum power dissipation of 326 watts. It comes in a through-hole TO-247N package, facilitating cooler operations and easy handling in various circuitry. This device is characterized by a turn-on time of 36 nanoseconds and a turn-off time of 115 nanoseconds, providing efficient switching performance. It operates with a gate threshold voltage of 2.1 volts at a gate-drive voltage of 15 volts while conducting a collector current of 50 amperes. The total gate charge is specified as 58 nano-coulombs, indicating its efficiency in power handling and switching.
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