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STWA75N60DM6N-Channel 600 V 72A (Tc) Through Hole TO-247 Long Leads

1:$7.9450

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ABRmicro #.ABR2045-STWA75-1016711
ManufacturerSTMicroelectronics
MPN #.STWA75N60DM6
Estimated Lead Time16 Weeks
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In Stock: 252
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 7.9450
Ext. Price$ 7.9450
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
600$7.9450$4767.2250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ DM6
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTWA75
Continuous Drain Current (ID) @ 25°C72A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))-
FET Feature-
FET TypeN-Channel
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-
Maximum Power Dissipation-
RDS(on) Drain-to-Source On Resistance-
Package Type (Mfr.)TO-247 Long Leads
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-247-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STWA75N60DM6 is a high-performance N-Channel MOSFET manufactured by STMicroelectronics, designed for use in high-voltage applications. It features a maximum drain-source voltage of 600V and can handle continuous currents up to 72A when connected through a TO-247 package with long leads, optimizing thermal performance. The device also has a gate-source voltage tolerance of ±25V, making it robust against voltage fluctuations. Its construction and specifications make it suitable for reliably managing high currents and voltages in various electronic circuits.
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