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STW34NB20N-Channel 200 V 34A (Tc) 180W (Tc) Through Hole TO-247-3
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ABRmicro #.ABR2045-STW34N-903833
ManufacturerSTMicroelectronics
MPN #.STW34NB20
Estimated Lead Time-
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DatasheetSTW34NB20(PDF)
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
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Tube
Shipping DateNovember 10, 2024
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E-ULN2004AN/A
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP Technical Specifications
SeriesPowerMESH™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTW34N
Continuous Drain Current (ID) @ 25°C34A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)80 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3300 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation180W (Tc)
RDS(on) Drain-to-Source On Resistance75mOhm @ 17A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-247-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)