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STW34NB20N-Channel 200 V 34A (Tc) 180W (Tc) Through Hole TO-247-3

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ABRmicro #.ABR278-STW34N-903833
ManufacturerSTMicroelectronics
MPN #.STW34NB20
Estimated Lead Time-
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DatasheetDatasheetSTW34NB20 (PDF)
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
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Shipping DateDecember 24, 2024
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Technical Specifications
SeriesPowerMESH™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTW34N
Continuous Drain Current (ID) @ 25°C34A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)80 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3300 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation180W (Tc)
RDS(on) Drain-to-Source On Resistance75mOhm @ 17A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-247-3
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Datasheets
STW34NB20
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The STW34NB20 is an N-channel MOSFET manufactured by STMicroelectronics. It features a voltage rating of 200 V and a continuous current rating of 34A when measured at the case temperature (Tc). The device has a power dissipation capacity of 180W under similar conditions and is housed in a TO-247-3 through-hole package. With a gate-source threshold voltage of 10V, the MOSFET demonstrates a capacitance of 3300 pF at 25 V and a total gate charge of 80 nC at 10 V. These characteristics make it suitable for handling high-power applications in various electronic systems.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.