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STU75N3LLH6-SN-Channel 30 V 75A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)

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ABRmicro #.ABR278-STU75N-905479
ManufacturerSTMicroelectronics
MPN #.STU75N3LLH6-S
Estimated Lead Time-
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DatasheetDatasheetSTx75N3LLH6(-S) (PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
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Shipping DateDecember 24, 2024
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Technical Specifications
SeriesDeepGATE™, STripFET™ VI
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTU75N
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1690 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation60W (Tc)
RDS(on) Drain-to-Source On Resistance5.9mOhm @ 37.5A, 10V
Package Type (Mfr.)TO-251 (IPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
STx75N3LLH6(-S)
PCN Obsolescence/ EOL
Power MOSFET Transistors 29/Jul/2013
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The STU75N3LLH6-S is an N-channel MOSFET manufactured by STMicroelectronics, designed for efficient power management and switching applications. It features a maximum drain-source voltage of 30V and can handle a continuous drain current of up to 75A when properly mounted. The device exhibits a low on-resistance, with a typical value of 5.9 milliohms at 37.5A and 10V, which helps reduce conduction losses. Additionally, it supports a high capacitance of 1690 pF at 25V, making it suitable for fast switching operations. The MOSFET is housed in a TO-251 (IPAK) package, making it suitable for through-hole mounting, and it can dissipate up to 60W of power when mounted to an appropriate heatsink.
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