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E-ULN2004ABipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP

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ABRmicro #.ABR277-E-ULN2-903680
ManufacturerSTMicroelectronics
MPN #.E-ULN2004A
Estimated Lead Time-
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DatasheetDatasheetULN200x(A,D1) (PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberULN2004
Collector Current (Iᴄ)@25°C500mA
Collector Cut-off Current (Iᴄᴇs)(Max.)-
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 350mA, 2V
Frequency - Transition-
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Power - Max-
Package Type (Mfr.)16-DIP
Transistor Type7 NPN Darlington
Vce Saturation (Max) @ Ib, Ic1.6V @ 500µA, 350mA
Collector-Emitter Breakdown Voltage (Max.)50V
Package / Case16-DIP (0.300", 7.62mm)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
ULN200x(A,D1)
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The E-ULN2004A, manufactured by STMicroelectronics, is a transistor array featuring seven NPN Darlington pairs integrated into a single package. Each transistor within the array is designed to handle a voltage rating of up to 50V and a current capacity of 500mA, making it suitable for moderate power applications. The package comes in a 16-pin Dual In-line Package (DIP) configuration, facilitating through-hole mounting on a circuit board. With a current gain configuration of 1000 at 350mA for 2V and a requirement of 1.6V at 500µA for driving 350mA, this array is engineered to deliver reliable amplification in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.