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E-ULN2004ABipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP

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ABRmicro #.ABR2045-E-ULN2-903680
ManufacturerSTMicroelectronics
MPN #.E-ULN2004A
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetULN200x(A,D1)(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 10, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberULN2004
Collector Current (Iᴄ)@25°C500mA
Collector Cut-off Current (Iᴄᴇs)(Max.)-
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 350mA, 2V
Frequency - Transition-
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Power - Max-
Package Type (Mfr.)16-DIP
Transistor Type7 NPN Darlington
Vce Saturation (Max) @ Ib, Ic1.6V @ 500µA, 350mA
Collector-Emitter Breakdown Voltage (Max.)50V
Package / Case16-DIP (0.300", 7.62mm)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
ULN200x(A,D1)
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)