STW9NK95ZN-Channel 950 V 7A (Tc) 160W (Tc) Through Hole TO-247-3
1:$2.6060
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ABRmicro #.ABR278-STW9NK-902975
ManufacturerSTMicroelectronics
MPN #.STW9NK95Z
Estimated Lead Time16 Weeks
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Datasheet
STW9NK95Z (PDF)
STW9NK95Z (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 23, 2024
* Quantity
Unit Price$2.6060
Ext. Price$2.6060
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.6060$2.6060
30$2.0640$61.9330
120$1.7700$212.4150
510$1.5730$801.9750
1020$1.3470$1374.1950
2010$1.2690$2549.9360
5010$1.2170$6094.9780
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesSuperMESH™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTW9
Continuous Drain Current (ID) @ 25°C7A (Tc)
Drain-to-Source Voltage (VDS)950 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)56 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2256 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation160W (Tc)
RDS(on) Drain-to-Source On Resistance1.38Ohm @ 3.6A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 100µA
Package / CaseTO-247-3
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Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Related Parts
E-ULN2004AN/A
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP
Additional Details
The STW9NK95Z is a high-voltage N-Channel MOSFET manufactured by STMicroelectronics, designed for handling up to 950 volts and 7 amps continuous current at a thermal capacity of 160 watts in the TO-247-3 package. It features a drain-source on-resistance of 1.38 ohms when driven with a gate-source voltage of 10 volts at a current of 3.6 amps. This MOSFET also has a total gate charge of 56 nanocoulombs at a gate-drain voltage of 10 volts, which allows for efficient switching performance in high-power applications. Its robust structure supports reliable operation in a range of demanding electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.