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STU2NK100ZN-Channel 1000 V 1.85A (Tc) 70W (Tc) Through Hole IPAK
1:$1.8270
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STU2NK-905302
ManufacturerSTMicroelectronics
MPN #.STU2NK100Z
Estimated Lead Time13 Weeks
SampleGet Free Sample
DatasheetSTx2NK100Z(PDF)
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In Stock: 2035
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 10, 2024
* Quantity
Unit Price$ 1.8270
Ext. Price$ 1.8270
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.8270$1.8270
75$1.4490$108.6750
150$1.2420$186.3000
525$1.2140$637.3500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP Technical Specifications
SeriesSuperMESH™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTU2NK100
Continuous Drain Current (ID) @ 25°C1.85A (Tc)
Drain-to-Source Voltage (VDS)1000 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)499 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation70W (Tc)
RDS(on) Drain-to-Source On Resistance8.5Ohm @ 900mA, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 50µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)