STP100N10F7N-Channel 100 V 80A (Tc) 150W (Tc) Through Hole TO-220
1:$1.7520
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ABRmicro #.ABR278-STP100-905981
ManufacturerSTMicroelectronics
MPN #.STP100N10F7
Estimated Lead Time26 Weeks
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Datasheet
STx100N10F7 Dat... (PDF)
STx100N10F7 Dat... (PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$1.7520
Ext. Price$1.7520
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.7520$1.7520
50$1.4080$70.3910
100$1.1580$115.8130
500$0.9800$489.8130
1000$0.8320$831.9380
2000$0.7910$1581.0000
5000$0.7610$3803.7500
10000$0.7350$7352.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesDeepGATE™, STripFET™ VII
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTP100
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)61 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4369 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance8mOhm @ 40A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-220-3
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PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Related Parts
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Additional Details
The STP100N10F7 is a power MOSFET produced by STMicroelectronics, featuring an N-channel configuration. It is designed to handle a maximum voltage of 100 V and can conduct up to 80A continuous current at a case temperature (Tc). The device can dissipate up to 150W under optimal conditions. It features a low on-resistance of 8 milliohms at a current of 40A and a gate-source voltage of 10V, making it efficient for power switching applications. The MOSFET includes a total gate charge of 4369 pF under 50 V, and a maximum gate-source voltage of ±20V. Encased in a TO-220 package, it is suitable for through-hole mounting.
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