STP100N10F7 STMicroelectronics

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STP100N10F7N-Channel 100 V 80A (Tc) 150W (Tc) Through Hole TO-220

1:$1.6490

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.

ABRmicro #.ABR2045-STP100-905981

ManufacturerSTMicroelectronics

MPN #.STP100N10F7

Estimated Lead Time26 Weeks

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Datasheet

STx100N10F7 DataSheet(PDF)

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In Stock: 647

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Shipping DateNovember 9, 2024

* Quantity

Unit Price$ 1.6490

Ext. Price$ 1.6490

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* Prices exclude tax, and all prices are in USD.

Price Gradients

Qty.Unit PriceExt. Price

1$1.6490$1.6490

50$1.3250$66.2500

100$1.0900$109.0000

500$0.9220$461.0000

1000$0.7830$783.0000

2000$0.7440$1488.0000

5000$0.7160$3580.0000

10000$0.6920$6920.0000

* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.

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Technical Specifications

SeriesDeepGATE™, STripFET™ VII

Packaging

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Lifecycle StatusActive

Base Product NumberSTP100

Continuous Drain Current (ID) @ 25°C80A (Tc)

Drain-to-Source Voltage (VDS)100 V

Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V

FET Feature-

FET TypeN-Channel

Gate Charge Total (Qg)(Max.)61 nC @ 10 V

Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4369 pF @ 50 V

MfrSTMicroelectronics

Mounting StyleThrough Hole

Operating Temperature-55°C ~ 175°C (TJ)

Maximum Power Dissipation150W (Tc)

RDS(on) Drain-to-Source On Resistance8mOhm @ 40A, 10V

Package Type (Mfr.)TO-220

TechnologyMOSFET (Metal Oxide)

Gate-to-Source Voltage (Vɢs)±20V

VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA

Package / CaseTO-220-3

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Datasheets

STx100N10F7 DataSheet