ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
PD85025-ERF Mosfet 13.6 V 300 mA 870MHz 17.3dB 10W PowerSO-10RF (Formed Lead)

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR285-PD8502-906612
ManufacturerSTMicroelectronics
MPN #.PD85025-E
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetPD85025-E (PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Send Inquiry
Add To RFQ List
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberPD85025
Current - Test300 mA
Current Rating (Amps)7A
Frequency870MHz
Gain17.3dB
Noise Figure-
Output Power10W
Package Type (Mfr.)PowerSO-10RF (Formed Lead)
TechnologyLDMOS
Rated Voltage40 V
Voltage - Test13.6 V
Package / CasePowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PD85025-E
Other Related Documents
PD85025-E View All Specifications
PCN Assembly/Origin
Mult Dev Assembly Chg 18/Oct/2019
PCN Packaging
Material Barrier Bag 17/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Related Parts
E-ULN2004AN/A
STMicroelectronics
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP
STP100N10F7$1.7520
STMicroelectronics
N-Channel 100 V 80A (Tc) 150W (Tc) Through Hole TO-220
STU2NK100Z$1.9410
STMicroelectronics
N-Channel 1000 V 1.85A (Tc) 70W (Tc) Through Hole IPAK
STU75N3LLH6-SN/A
STMicroelectronics
N-Channel 30 V 75A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)
STW34NB20N/A
STMicroelectronics
N-Channel 200 V 34A (Tc) 180W (Tc) Through Hole TO-247-3
STW69N65M5$7.0440
STMicroelectronics
N-Channel 650 V 58A (Tc) 330W (Tc) Through Hole TO-247-3
STW9NK95Z$2.6060
STMicroelectronics
N-Channel 950 V 7A (Tc) 160W (Tc) Through Hole TO-247-3
Additional Details
The PD85025-E by STMicroelectronics is an RF MOSFET transistor designed for operations up to 870 MHz, with a power output of 10 watts and a power gain of 17.3 dB. It operates at a nominal voltage of 13.6 V with a capability to handle 300 mA of current. Its robust design supports a maximum voltage of 40 V and a current capacity of 7 A, utilizing LDMOS technology. The component is housed in a PowerSO-10RF package with formed leads, ensuring reliable performance in high-frequency applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.