STW69N65M5 STMicroelectronics

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STW69N65M5N-Channel 650 V 58A (Tc) 330W (Tc) Through Hole TO-247-3

1:$6.6300

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.

ABRmicro #.ABR2045-STW69N-904094

ManufacturerSTMicroelectronics

MPN #.STW69N65M5

Estimated Lead Time16 Weeks

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Datasheet

ST(F)W69N65M5(PDF)

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In Stock: 339

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Shipping DateNovember 10, 2024

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Unit Price$ 6.6300

Ext. Price$ 6.6300

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Price Gradients

Qty.Unit PriceExt. Price

1$6.6300$6.6300

30$5.5600$166.8000

* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.

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Technical Specifications

SeriesMDmesh™ V

Packaging

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Lifecycle StatusActive

Base Product NumberSTW69

Continuous Drain Current (ID) @ 25°C58A (Tc)

Drain-to-Source Voltage (VDS)650 V

Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V

FET Feature-

FET TypeN-Channel

Gate Charge Total (Qg)(Max.)143 nC @ 10 V

Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6420 pF @ 100 V

MfrSTMicroelectronics

Mounting StyleThrough Hole

Operating Temperature150°C (TJ)

Maximum Power Dissipation330W (Tc)

RDS(on) Drain-to-Source On Resistance45mOhm @ 29A, 10V

Package Type (Mfr.)TO-247-3

TechnologyMOSFET (Metal Oxide)

Gate-to-Source Voltage (Vɢs)±25V

VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA

Package / CaseTO-247-3

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Datasheets

ST(F)W69N65M5