STW69N65M5N-Channel 650 V 58A (Tc) 330W (Tc) Through Hole TO-247-3
1:$7.0440
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ABRmicro #.ABR278-STW69N-904094
ManufacturerSTMicroelectronics
MPN #.STW69N65M5
Estimated Lead Time16 Weeks
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Datasheet
ST(F)W69N65M5 (PDF)
ST(F)W69N65M5 (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$7.0440
Ext. Price$7.0440
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$7.0440$7.0440
30$5.9080$177.2250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesMDmesh™ V
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTW69
Continuous Drain Current (ID) @ 25°C58A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)143 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6420 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation330W (Tc)
RDS(on) Drain-to-Source On Resistance45mOhm @ 29A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-247-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The STW69N65M5 is an N-channel power MOSFET manufactured by STMicroelectronics, designed for high-voltage applications. It operates with a maximum drain-source voltage of 650 V and can handle a continuous drain current of 58A under certain conditions (Tc). It supports a power dissipation of up to 330W (Tc), making it suitable for demanding power environments. Encased in a TO-247-3 through-hole package, the component features a gate charge of 143 nC at 10 V and a typical input capacitance of 6420 pF at 100 V. These specifications make it a robust component for efficient power switching.
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