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STWA50N65DM2AGN-Channel 650 V 38A (Tc) 300W (Tc) Through Hole TO-247-3

1:$4.4660

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ABRmicro #.ABR2045-STWA50-983201
ManufacturerSTMicroelectronics
MPN #.STWA50N65DM2AG
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetSTWA50N65DM2AG(PDF)
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In Stock: 73
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 4.4660
Ext. Price$ 4.4660
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
600$4.4660$2679.4130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ DM2
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTWA50
Continuous Drain Current (ID) @ 25°C38A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)69 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3200 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation300W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance87mOhm @ 19A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
STWA50N65DM2AG
PCN Assembly/Origin
Wafer 15/Feb/2019
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STWA50N65DM2AG by STMicroelectronics is an N-channel MOSFET designed to handle high voltage and current, featuring a 650 V drain-source voltage rating and a maximum continuous drain current of 38A at Tc. Encased in a TO-247-3 package, this device is tailored for through-hole mounting and can dissipate up to 300W at Tc, enhancing its heat management capabilities. The MOSFET exhibits a low on-resistance of 87mOhm when tested at 19A with a gate-source voltage of 10V, and it is capable of withstanding gate-source voltages up to ±25V, making it robust for a variety of power management scenarios.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.