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STW75N20N-Channel 200 V 75A (Tc) 190W (Tc) Through Hole TO-247-3

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ABRmicro #.ABR2045-STW75N-980360
ManufacturerSTMicroelectronics
MPN #.STW75N20
Estimated Lead Time-
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DatasheetDatasheetSTx75N20(PDF)
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Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSTripFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTW75N
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)84 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3260 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-50°C ~ 150°C (TJ)
Maximum Power Dissipation190W (Tc)
RDS(on) Drain-to-Source On Resistance34mOhm @ 37A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STx75N20
Video File
Motor Control in Electric Vehicles
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STW75N20 is an N-Channel MOSFET manufactured by STMicroelectronics, designed for high-efficiency power management. Encased in a TO-247-3 package for through-hole mounting, it supports a maximum drain-source voltage of 200 V and can handle a continuous current of 75A at case temperature (Tc). The device can dissipate up to 190W under optimal thermal conditions. It features a low on-state resistance of 34 mOhms at a gate-source voltage of 10V and a drain current of 37A, highlighting its capability for minimizing power losses in high-current scenarios. The MOSFET also offers a gate-source voltage tolerance of ±20V, ensuring robust performance across a variety of power supply conditions.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.