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STW70N10F4N-Channel 100 V 65A (Tc) 150W (Tc) Through Hole TO-247-3
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ABRmicro #.ABR2045-STW70N-991345
ManufacturerSTMicroelectronics
MPN #.STW70N10F4
Estimated Lead Time-
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DatasheetSTx70N10F4(PDF)
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In Stock: 5
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Shipping DateNovember 16, 2024
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SeriesDeepGATE™, STripFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTW70N
Continuous Drain Current (ID) @ 25°C65A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)85 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5800 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance19.5mOhm @ 30A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STW70N10F4 by STMicroelectronics is an N-Channel MOSFET that operates at a maximum voltage of 100V and can handle a continuous current of 65A when mounted on a suitable heatsink. Packaged in a through-hole TO-247-3 case, this component can dissipate up to 150W of power. It features a gate-source threshold voltage tolerance of ±20V and an on-resistance of 19.5 milliohms at a drain current of 30A and gate-source voltage of 10V. Additionally, the MOSFET has a total gate charge of 85 nC when driven at 10V, making it suitable for applications requiring efficient and powerful switching.
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