STW56N65M2N-Channel 650 V 49A (Tc) 358W (Tc) Through Hole TO-247-3
1:$7.2310
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ABRmicro #.ABR2045-STW56N-1038167
ManufacturerSTMicroelectronics
MPN #.STW56N65M2
Estimated Lead Time16 Weeks
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Datasheet
STW56N65M2(PDF)
STW56N65M2(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 7.2310
Ext. Price$ 7.2310
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$7.2310$7.2310
30$5.7760$173.2730
120$5.1680$620.1600
510$4.5600$2325.7280
1020$4.1040$4186.5260
2010$3.8460$7730.9630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ M2
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTW56
Continuous Drain Current (ID) @ 25°C49A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)93 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3900 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation358W (Tc)
RDS(on) Drain-to-Source On Resistance62mOhm @ 24.5A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
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Datasheets
PCN Assembly/Origin
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STW56N65M2 is a power MOSFET produced by STMicroelectronics, designed for high-efficiency switching applications. It features an N-channel configuration with a maximum voltage rating of 650 V and can handle a continuous current of 49A at case temperature (Tc). The device is capable of dissipating 358W of power at Tc, and is housed in a TO-247-3 through-hole package. It operates with a gate threshold voltage of 4V at a gate current of 250µA and supports a maximum gate-to-source voltage of ±25V, making it suitable for robust and efficient performance in demanding environments.
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