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STW46NF30N-Channel 300 V 42A (Tc) 300W (Tc) Through Hole TO-247-3
1:$3.3430
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ABRmicro #.ABR2045-STW46N-965653
ManufacturerSTMicroelectronics
MPN #.STW46NF30
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetSTx46NF30(PDF)
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In Stock: 436
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.3430
Ext. Price$ 3.3430
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.3430$3.3430
30$2.6460$79.3690
120$2.2670$272.0850
510$2.0160$1027.9370
1020$1.7260$1760.0100
2010$1.6250$3265.3710
5010$1.5590$7809.0240
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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E-ULN2004AN/A
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP Technical Specifications
SeriesSTripFET™ II
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTW46
Continuous Drain Current (ID) @ 25°C42A (Tc)
Drain-to-Source Voltage (VDS)300 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)90 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3200 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance75mOhm @ 17A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STW46NF30 is an N-channel power MOSFET manufactured by STMicroelectronics, designed for high voltage and high current applications. It features a maximum drain-source voltage of 300V and can handle a continuous drain current of 42A under specified conditions with a total power dissipation of 300W. Housed in a TO-247-3 package, this MOSFET offers a low on-resistance of 75 milliohms at a gate-source voltage of 10V and a drain current of 17A. The device can tolerate gate-source voltages up to ±20V and has a gate threshold voltage of 4V at a drain current of 250µA, making it suitable for various power switching applications demanding robust performance and reliability.
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