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STW45NM50FDN-Channel 500 V 45A (Tc) 417W (Tc) Through Hole TO-247-3

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ABRmicro #.ABR2045-STW45N-907725
ManufacturerSTMicroelectronics
MPN #.STW45NM50FD
Estimated Lead Time-
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DatasheetDatasheetSTW45NM50FD(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 9, 2024
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Technical Specifications
SeriesFDmesh™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTW45N
Continuous Drain Current (ID) @ 25°C45A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3600 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
Maximum Power Dissipation417W (Tc)
RDS(on) Drain-to-Source On Resistance100mOhm @ 22.5A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
STW45NM50FD
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)