STW40N95K5N-Channel 950 V 38A (Tc) 450W (Tc) Through Hole TO-247-3
1:$14.0620
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ABRmicro #.ABR2045-STW40N-991506
ManufacturerSTMicroelectronics
MPN #.STW40N95K5
Estimated Lead Time16 Weeks
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Datasheet
STW40N95K5(PDF)
STW40N95K5(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 14.0620
Ext. Price$ 14.0620
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$14.0620$14.0620
30$11.3850$341.5410
120$10.7140$1285.7100
510$9.7100$4952.1960
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ K5
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTW40
Continuous Drain Current (ID) @ 25°C38A (Tc)
Drain-to-Source Voltage (VDS)950 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)93 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3300 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation450W (Tc)
RDS(on) Drain-to-Source On Resistance130mOhm @ 19A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-247-3
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Datasheets
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STW40N95K5 is a high-voltage, high-power N-Channel MOSFET manufactured by STMicroelectronics. It operates at a maximum drain-source voltage of 950 V and can handle a continuous drain current of up to 38A under specified conditions. This MOSFET features a low on-resistance of 130 milliohms when a gate-source voltage of 10V is applied, ensuring efficient operation with minimal power loss. Its total gate charge is 93 nanocoulombs at a gate voltage of 10V. The device is encapsulated in a TO-247-3 package, making it suitable for through-hole mounting and facilitating straightforward integration into a variety of circuits. Furthermore, it is capable of dissipating up to 450 watts of power, making it suitable for demanding applications where thermal management is crucial.
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