STW35N60DM2N-Channel 600 V 28A (Tc) 210W (Tc) Through Hole TO-247-3
1:$4.4330
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ABRmicro #.ABR2045-STW35N-1001123
ManufacturerSTMicroelectronics
MPN #.STW35N60DM2
Estimated Lead Time16 Weeks
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Datasheet
STW35N60DM2(PDF)
STW35N60DM2(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 4.4330
Ext. Price$ 4.4330
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
30$4.4330$132.9830
90$3.9660$356.9680
300$3.7330$1119.7690
750$3.4990$2624.1090
1500$3.1490$4723.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ DM2
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTW35
Continuous Drain Current (ID) @ 25°C28A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)54 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2400 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation210W (Tc)
RDS(on) Drain-to-Source On Resistance110mOhm @ 14A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-247-3
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Datasheets
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STW35N60DM2 is an N-channel MOSFET manufactured by STMicroelectronics, designed to handle a maximum voltage of 600 V and a continuous current of up to 28 A when mounted on a conductive surface (Tc). It has a power dissipation capability of 210 W under the same conditions. The device comes in a TO-247-3 through-hole package, making it suitable for high power handling and easy installation on printed circuit boards. Its key electrical characteristics include a total gate charge of 54 nC at a gate-source voltage of 10 V, a threshold voltage of 10 V, and an on-state drain-source voltage of 5 V at a drain current of 250 µA.
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