The STW31N65M5 is a power MOSFET manufactured by STMicroelectronics, featuring an N-channel configuration. It is designed for high voltage applications, offering a drain-source voltage (Vds) rating of 650 V and a continuous drain current (Id) of 22A when properly mounted on a heat sink with adequate thermal management at the case temperature (Tc) specified. Its power dissipation capacity reaches 150W at Tc, reinforcing its utility in demanding conditions. The device is encapsulated in a TO-247-3 package, facilitating through-hole mounting. Characterized by a gate charge (Qg) of 45 nC at 10 V and an input capacitance (Ciss) of 816 pF at 100 V, this MOSFET supports efficient switching performance appropriate for various power electronic designs.