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STW25NM60NN-Channel 600 V 21A (Tc) 160W (Tc) Through Hole TO-247-3

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ABRmicro #.ABR2045-STW25N-934877
ManufacturerSTMicroelectronics
MPN #.STW25NM60N
Estimated Lead Time-
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DatasheetDatasheetSTx25NM60N(-1)(PDF)
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In Stock: 17
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Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesMDmesh™ II
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTW25N
Continuous Drain Current (ID) @ 25°C21A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)84 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2400 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation160W (Tc)
RDS(on) Drain-to-Source On Resistance160mOhm @ 10.5A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
STx25NM60N(-1)
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STW25NM60N is a power MOSFET produced by STMicroelectronics, featuring an N-Channel design with a voltage rating of 600V and a current capacity of 21A under specific conditions (Tc). It offers a power dissipation capability of 160W under optimal thermal conditions and comes in a TO-247-3 package suitable for through-hole mounting. This MOSFET has a gate-to-source voltage of ±25V, with an input capacitance of 2400 pF at 50V, and a total gate charge of 84 nC at 10V, making it suitable for various high-power applications that demand efficient switching and robustness under high-voltage conditions.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.