STW21NM60NDN-Channel 600 V 17A (Tc) 140W (Tc) Through Hole TO-247-3
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ABRmicro #.ABR2045-STW21N-1017975
ManufacturerSTMicroelectronics
MPN #.STW21NM60ND
Estimated Lead Time-
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesFDmesh™ II
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTW21
Continuous Drain Current (ID) @ 25°C17A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1800 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation140W (Tc)
RDS(on) Drain-to-Source On Resistance220mOhm @ 8.5A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-247-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STW21NM60ND is a high-performance N-Channel MOSFET manufactured by STMicroelectronics, designed for high voltage and current applications. It features a breakdown voltage of 600 V and can handle a continuous current of 17A at a case temperature, dissipating up to 140W power in a TO-247-3 package. Its gate-source threshold voltage is 5V at 250µA, with a gate-source voltage tolerance of ±25V. It exhibits a low on-resistance of 220 milliohms at 8.5A when driven with a 10V gate voltage, making it suitable for efficient power switching tasks.
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