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STW21NM60NN-Channel 600 V 17A (Tc) 140W (Tc) Through Hole TO-247-3
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ABRmicro #.ABR2045-STW21N-1018485
ManufacturerSTMicroelectronics
MPN #.STW21NM60N
Estimated Lead Time-
SampleGet Free Sample
DatasheetSTx21NM60N(-1)(PDF)
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In Stock: 10
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Shipping DateNovember 16, 2024
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SeriesMDmesh™
Packaging
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Lifecycle StatusObsolete
Base Product NumberSTW21N
Continuous Drain Current (ID) @ 25°C17A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)66 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1900 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation140W (Tc)
RDS(on) Drain-to-Source On Resistance220mOhm @ 8.5A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STW21NM60N is a versatile N-Channel MOSFET manufactured by STMicroelectronics, featuring a voltage rating of 600 V and a current capacity of 17A at Tc conditions. It is designed for high power efficiency with a power dissipation of 140W also at Tc. Encased in a TO-247-3 package, this MOSFET caters to through-hole mounting requirements. With a gate-to-source voltage of ±25V and a gate charge of 66 nC at 10 V, it presents reliable switching characteristics for demanding electrical applications.
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