STW21N65M5N-Channel 650 V 17A (Tc) 125W (Tc) Through Hole TO-247-3
1:$3.3160
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ABRmicro #.ABR2045-STW21N-920801
ManufacturerSTMicroelectronics
MPN #.STW21N65M5
Estimated Lead Time-
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Datasheet
STx21N65M5(PDF)
STx21N65M5(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 3.3160
Ext. Price$ 3.3160
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.3160$3.3160
30$2.8770$86.3180
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ V
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTW21N
Continuous Drain Current (ID) @ 25°C17A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1950 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance190mOhm @ 8.5A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-247-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STW21N65M5 is a power MOSFET manufactured by STMicroelectronics, characterized by its N-Channel configuration and ability to handle a maximum voltage of 650 V. It can conduct a continuous current of 17A under specified temperature conditions, with a power dissipation capacity of 125W. The component is designed for through-hole mounting and comes in a TO-247-3 package. With a low on-state resistance of 190 mOhms at 8.5A and 10V, it efficiently minimizes power loss, and it supports gate-to-source voltages of up to ±25V. The device also features a typical gate threshold voltage of 5V at a drain current of 250µA, making it suitable for high-power applications that require reliable switching performance.
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