STW20N95K5N-Channel 950 V 17.5A (Tc) 250W (Tc) Through Hole TO-247-3
1:$5.4370
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ABRmicro #.ABR2045-STW20N-1011548
ManufacturerSTMicroelectronics
MPN #.STW20N95K5
Estimated Lead Time16 Weeks
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Datasheet
STx20N95K5(PDF)
STx20N95K5(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 5.4370
Ext. Price$ 5.4370
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.4370$5.4370
30$4.3410$130.2410
120$3.8860$466.2680
510$3.4280$1748.0890
1020$3.0840$3146.1260
2010$2.8900$5808.9000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperMESH5™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTW20
Continuous Drain Current (ID) @ 25°C17.5A (Tc)
Drain-to-Source Voltage (VDS)950 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1500 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation250W (Tc)
RDS(on) Drain-to-Source On Resistance330mOhm @ 9A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-247-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STW20N95K5 is a robust N-channel MOSFET manufactured by STMicroelectronics, designed for high-voltage applications with a maximum voltage rating of 950 V and a current rating of 17.5A when measured at the case (Tc). It is capable of handling up to 250W of power dissipation at its maximum case temperature. The device is housed in a TO-247-3 package, making it suitable for through-hole mounting. Key electrical characteristics include a gate charge of 1500 pF at 100 V and a low on-state resistance of 330 mOhm when conducting 9A at 10V, ensuring efficient performance in power conversion and switching tasks.
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