STW18N65M5N-Channel 650 V 15A (Tc) 110W (Tc) Through Hole TO-247-3
1:$3.0440
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ABRmicro #.ABR2045-STW18N-1018535
ManufacturerSTMicroelectronics
MPN #.STW18N65M5
Estimated Lead Time16 Weeks
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Datasheet
STx18N65M5(PDF)
STx18N65M5(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.0440
Ext. Price$ 3.0440
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.0440$3.0440
30$2.4120$72.3560
120$2.0670$247.9880
510$1.8370$936.9020
1020$1.5730$1603.9500
2010$1.4810$2977.0610
5010$1.4220$7122.3410
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ V
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTW18
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1240 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation110W (Tc)
RDS(on) Drain-to-Source On Resistance220mOhm @ 7.5A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-247-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STW18N65M5 is a robust N-Channel MOSFET produced by STMicroelectronics, designed to handle high power and voltage requirements. It features a voltage rating of 650 volts and a current capacity of 15 amperes under certain conditions (Tc). The component is capable of dissipating 110 watts of power, with a threshold voltage of 5 volts at 250 microamperes. The MOSFET exhibits a drain-source on-state resistance of 220 milli-ohms at a current of 7.5 amps and a gate voltage of 10 volts. It can withstand gate-source voltages up to ±25 volts. The device is encased in a TO-247-3 through-hole package, facilitating its integration into power electronic systems.
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